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PHT2NQ10T,135

PHT2NQ10T,135

Part Number
PHT2NQ10T,135
Manufacturer
NXP USA Inc.
Description
MOSFET N-CH 100V 2.5A SOT223
Data sheet
PHT2NQ10T,135.pdf
Category
Transistors - FETs, MOSFETs - Single
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5000
Lead Time
To be Confirmed
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PHT2NQ10T,135

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  • Part Number # PHT2NQ10T,135 (Transistors - FETs, MOSFETs - Single) is manufactured by NXP USA Inc. and distributed by Shenzhen Jinxinyang Technology Co., Ltd.. Being one of the leading electronics distributors, we carry many kinds of electronic components from some of the world’s top class manufacturers. Their quality is guaranteed by its stringent quality control to meet all required standards.For PHT2NQ10T,135 specifications/configurations, quotation, lead time, payment terms of further enquiries please have no hesitation to contact us. To process your RFQ, please add PHT2NQ10T,135 with quantity into BOM. Shenzhen Jinxinyang Technology Co., Ltd. does NOT require any registration to request a quote of PHT2NQ10T,135. Buy the PHT2NQ10T,135 NXP USA Inc. on Shenzhen Jinxinyang Technology Co., Ltd.,we are NXP USA Inc. Corporation distributor, we sales new&original and offer 24 hours service,90 days warranty date, send the PHT2NQ10T,135 within 24 hours,please contact our sales team or send email to liya@szjxy-ic.com Hope we can cooperate in the future.

    PHT2NQ10T,135 Specifications

    Part Status Obsolete
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 100V
    Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
    Drive Voltage (Max Rds On,Min Rds On) -
    Vgs(th) (Max) @ Id 4V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs 5.1nC @ 10V
    Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V
    Vgs (Max) -
    FET Feature -
    Power Dissipation (Max) 6.25W (Tc)
    Rds On (Max) @ Id, Vgs 430 mOhm @ 1.75A, 10V
    Operating Temperature -65°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Supplier Device Package SOT-223
    Package / Case TO-261-4, TO-261AA
    Shipment UPS/EMS/DHL/FedEx Express.
    Condtion New original factory.

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